Silicon grid calibration standard

EM-Tec M1 and EM-Tec M-10 calibration standards from Micro to Nano both have a square mesh grid pattern etched in the surface of an ultra-flat Si substrate. Grid patterns are practical tools for magnification calibration and image distortion assessments. They are intended for use for SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy applications. Specimens can also be mounted directly on the pattern – in this case the pattern in the background will give a direct calibration within the image. This is especially useful when working with small specimens and powders. The Micro to Nano EM-Tec M1 and M-10 grid pattern calibration standards are supplied with a wafer level certificate of traceability to NIST.

There are two types of grid pattern calibration standards:

EM-Tec M-1 with a 1µm pitch grid pattern for the 100x to 10,000x magnification range
EM-Tec M-10 with a 10um pitch grid pattern for the 100x to 1000x magnification range

EM-Tec M-1
This standard has a grid pattern with a pitch of 1 µm and lines at 1, 10 and 100µm. It is useful for calibration and image distortion checks in the 100x to 10,000x magnification range.  Alternatively, specimens can be placed directly on the grid pattern for immediate calibration or internal calibration in the image – particularly useful for small specimens. The lines are etched directly into the ultra-flat Si substrate which will give superior signal strength compared to SiO2 etched structures.

This standard is NIST traceable; example of wafer level certificate of traceability for the EM-Tec M-1 grid pattern calibration standard.
Intended for SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy

Ordering information: